15.6 0.2 5.45 0.1 3.35 0.2 3.45 0.2 5.5 0.2 3.2 0.2 23 0.3 3.3 1.6 5.5 0.2 9.5 0.2 2.15 (16.2) 5.45 0.1 1.5 4.4 1.5 0.1 + 0.2 1.05 0.1 + 0.2 0.65 0.1 + 0.2 1.75 0.1 + 0.2 n absolute maximum ratings n electrical characteristics parameter symbol ratings unit conditions v conduction angle 360 , tc=92.5 c 50hz full-cycle sinewave, peak value, non-repetitive, tj=125 c f 50hz, duty 10% f 50hz, duty 10% f 50hz, duty 10% 50hz sine wave, rms, terminal to case, 1 min. 400 tm1641b-l 600 tm1661b-l a a v a w w c c v drm i t(rms) i tsm v gm i gm p gm p g(av) tj tstg 16 160 10 2 5 0.5 40 to + 125 40 to + 125 vrms v iso 2000 v t 2 + , g + t 2 + , g t 2 , g t 2 , g + t 2 + , g + t 2 + , g t 2 , g t 2 , g + v ma v ma c /w parameter symbol ratings typ min max unit conditions ma i drm v tm v gt i gt v gd i h rth 0.7 0.8 1.0 12 16 25 70 25 0.8 0.1 1.5 30 30 30 1.8 0.2 10 1.6 1.5 1.5 0.1 2.0 v d = v drm , r gk = , tj = 125 c v d = v drm , r gk = , tj = 25 c i tm = 20a, t c = 25 c v d = 6v, r l = 10 , t c = 25 c v d = 6v, r l = 10 , t c = 25 c junction to case tj = 25 c v/ s (dv/dt)c v d = 400v, tj = 125 c v d = 1/2 v drm , tj = 125 c 48 tm1641b-l, tm1661b-l to-3pf 16a triac n features l repetitive peak off-state voltage: v drm =400, 600v l rms on-state current: i t(rms) =16a l gate trigger current: i gt =30ma max (mode , , ) l rate-of-rise of off-state commutation voltage : (dv/dt)c=10v/ s min. l isolation voltage: v iso =2000v(ac, 1min.) l ul approved type available external dimensions (unit: mm) weight: approx. 6.5g (1) (2) (3) (1). terminal 1 (t 1 ) (2). terminal 2 (t 2 ) (3). gate (g) a. part number b. lot number a b repetitive peak off-state voltage rms on-state current surge on-state current peak gate voltage peak gate current peak gate power loss average gate power loss junction temperature storage temperature isolation voltage off-state current on-state voltage gate trigger voltage gate trigger current gate non-trigger voltage holding current rate-of-rise of off-state commutation voltage thermal resistance
0.4 0.1 1 100 10 0.8 1.2 2.0 2.4 1.6 2.8 on-state voltage v t (v) on-state current i t (a) v t i t characteristics (max) 1 5 10 50 100 0 80 60 120 100 140 160 40 20 180 number of cycle surge on-state current i tsm (a) i tsm ratings 0481216 0 8 12 16 4 20 rms on-state current i t ( rms ) (a) average on-state power p t ( av ) (w) i t(rms) ? t(av) characteristics 048121620 0 50 75 100 25 150 125 rms on-state current i t ( rms ) (a) case temperature t c ( c) i t(rms) tc ratings 0 40 25 25 50 75 100 125 0.8 1.2 0.4 0 1.6 2.0 (v d =6v r l =10 ) junction temperature tj ( c) gate trigger voltage v gt (v) 10 1 100 1000 5000 0 1 10 50 gate current i gf (ma) gate voltage v gf (v) gate characteristics tj =125 c tj =25 c v gm =10v i gm =2a p g ( av ) =0.5w p gm =5w v gd =0.2v ?0 c v gt =1.8v ?0 c i gt =75ma 25 c v gt =1.5v 25 c i gt =30ma mode 0 ?0 25 ?0 25 ?0 25 25 50 75 100 125 100 10 1 1000 junction temperature tj ( c) latching current i l (ma) 0 25 50 75 100 125 10 100 1 1000 (r g-k =1k ) junction temperature tj ( c) holding current i h (ma) 0 25 50 75 100 125 5 10 1 50 100 (v d =6v r l =10 ) junction temperature tj ( c) gate trigger current igt (ma) 10 5 10 4 10 3 10 2 10 1 5 1 0.5 t, time (ms) transient thermal resistance r th (j-c) ( c/w) r th( j-c) ? characteristics mode mode (r g-k = ) 49 tm1641b-l, tm1661b-l 1cycle 10 ms i tsm tj=125 c initial junction temperature full-cycle sinewave conduction angle :360 full-cycle sinewave conduction angle :360 v gt temperature characteristics (typical) i gt temperature characteristics (typical) i h temperature characteristics (typical) i l temperature characteristics (typical)
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